Special Report: Optical Patterns
K. Iga, S. Ishikawa, S. Ohkouchi, and T. Nishimura, "Room-temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser," Appl. Phys. Lett. 45, 348-350 (1984).
H. Soda, K. Iga, C. Kitahara, and Y. Suematsu, "GaInAsP/InP surface emitting injection lasers," Jpn. J. Appl. Phys. 18, 2329-2330 (1979).
J. L. Jewell, A. Scherer, S. L. McCall, Y. H. Lee, S. Walker, J. P. Harbison, and L. T. Florez, "Low threshold electrically pumped vertical-cavity surface emitting microlasers," Electron. Lett. 25, 1123-1124 (1989).
J. L. Jewell, J .P. Harbison and A. Scherer, "Microlasers," Sci. Am. 86-94 (Nov. 1991).
J. L. Jewell, J. P. Harbison, A. Scherer, Y. H. Lee, L. T. Florez, "Vertical-cavity surface emitting lasers: Design, growth, fabrication, characterization," IEEE J. Quantum Electron. 27 1332-1346 (1991).
Y. H. Lee, B. Tell, K. F. Brown-Goebeler, R. E. Leibenguth, and V. D. Mattera, "Deep-reed continuous wave top-surface emitting vertical-cavity AlGaAs superlattice lasers," IEEE Photon. Tech. Lett. 3(2), 108-109 (1991).
Y. H. Lee, B. Tell, K. F. Brown-Goebeler, J. L. Jewell, and J. M. Hove, "Top-surface emitting GaAs four-quantum-well lasers emitting at 0.85 mm," Electron. Lett. 26, 710-712 (1990).
G. M. Yang, M. H. McDougal, and P. D. Dapkus, "Ultralow threshold VCSELs fabricated by selective oxidation from all epitaxial structure," in Conference on Lasers and Electro-Optics, Vol. 15 of 1995 OSA Technical Digest Series (Optical Society of America, Washington, D. C., 1995), Paper CPD4.
K. D. Choquette, R. P. Schneider, Jr., K. M. Geib, "Low threshold voltage vertical-cavity lasers fabricated by selective oxidation," Electron. Lett. 30, 2043-2044 (1994).
K. L. Lear, K. D. Choquette, R. P. Schneider, Jr., S. P. Kilcoyne, and K. M. Geib, "Selectively oxidized vertical cavity surface emitting lasers with 50% power conversion efficacy," Electron. Lett. 31, 208-209 (1995).
A. Hayashi, T. Mukaihara, N. Hatori, A. Matsutani, F. Koyama and K. Iga, "Lasing characteristics of low-threshold oxide confinement InGaAs-GaAlAs vertical-cavity surface emitting lasers," IEEE Photon. Technol. Lett. 7, 1234-1236 (1995).
H. J. Yoo, J. R. Hayes, N. Andreadakis, E. G. Paek, and G. K. Chang, J. P. Harbison, L. T. Florez, and Y. S. Kwon, "Low series resistance vertical-cavity front-surface emitting laser diode," Appl. Phys. Lett. 56, 1942-1944 (1990).
T. Numai, M. Sugimoto, I. Ogura, H. Kosaka, and K. Kasahara, "Current versus light output characteristics with no definite threshold in pnpn vertical to surface transmission electro-photonic devices with a vertical cavity," Jpn. J. Appl. Phys. 30, L602-L604 (1991).
G. Bjork, A. Karlsson, Y. Yamamoto, "On the linewidth of microcavity lasers," Appl. Phys. Lett. 60, 304-306 (1992).
U. Mohideen, R. E. Slusher, F. Janke, and S. W. Koch, "Semiconductor-microlaser linewidths," in International Quantum Electronics Conference (Optical Society of America, Washington, D. C., 1994), p. 153.
G. R. Olbright, R. P. Bryan, W. S. Fu, R. Apte, D. M. Bloom, and Y. H. Lee, "Linewidth, tunability, and VHF-millimeter wave frequency synthesis of vertical-cavity GaAs quantum-well surface emitting laser diode arrays," IEEE Photon. Tech. Lett. 3, 779-781 (1991).
T.E. Sale, Vertical Cavity Surface Emitting Laser (John Wiley & Sons Inc. New York, 1995).
R. A. Morgan, G. D. Guth, M. W. Focht, M. T. Asom, K. Kojima, L. E. Rogers, and S. E. Callis, "Transeverse mode control of vertical-cavity top-surface emitting lasers," IEEE Photon. Tech. Lett. 4(4), 374-377 (1993).
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